| Radiation Physics Group |
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| Education | ||
| Professional Experience | ||
| Research Interests | ![]() |
Contact InformationHome: Ph: (858) 451057814303 Breezeway Place, San Diego, CA, 92128, United States. Work: Ph: (858) 6753468
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| PhD Summary | ||
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| Complete Resume |
Masters Thesis: "The Effects of Ionizing Radiation on Implantable
MOS devices"
Thesis presented the world's first evidence and analysis of cosmic
radiation effects on a life supporting medical application (implantable
cardioverter defibrillator).
PhD Thesis: "The Development
of a Novel Silicon Microdosimeter for High LET Radiation Therapy"
Thesis presented the first comprehensive investigation of the issues
confronting silicon microdosimetry and its application to radiotherapy
The aim was to investigate and develop a silicon based microdosimeter which offers the possibility of replacing the current proportional gas counter for measurements of radiation deposited in cellular (10um diameter) sized volumes. Four main problems were addressed
Some of the experimental and theoretical work performed is summarised below.
- Inadequare requirement specifications and analysis of shape of sensitive volume
- Diffusion of charge within the silicon obscures the charge collection volume boundary.
- Tissue equivalence of silicon for microdosimetric measurements.
- Poor noise performance in comparison with gas counter.
Figure 2: Electron density for 2um SOI device, 100ps after 5.3MeV
alpha strike at x=3.5,y=15um. (1/4 of device is shown, dimensions 15x15x2um,
center of diode is nearest to viewpoint). The alpha radiation generates
electron-hole pairs in the silicon. The minority carrier electrons diffuse
as shown by the radial diffusion profile above. The electrons are collected
at the n+ junction (red). Charge collection is efficient in this region
due to the strong electric field within the depletion region. A 2D animated
transient simulation is also available.
