Radiation Physics Group
Peter Bradley

Education
Professional Experience
Research Interests

Contact Information

Home: Ph: (858) 4510578
14303 Breezeway Place,
San Diego, CA, 92128, United States.

Work: Ph: (858) 6753468
Zarlink Semiconductor, Medical Business Unit
Senior IC designer/Project manager
10815 Rancho Bernardo Rd, Suite 210;
San Diego, CA, 92127, United States.
peter.bradley@zarlink.com

PhD Summary
Publications
Conferences
Software developed
Complete Resume

Education


Research Interests


PhD Summary

National Health and Medical Research funded position. PhD Project entitled:
"The Development of a Novel Silicon Microdosimeter for High LET Radiation Therapy"
(NOTE: For an abstract, table of contents, PDF version of the thesis and individual chapters,  go to the link highlighted above)
The aim was to investigate and develop a silicon based microdosimeter which offers the possibility of replacing the current proportional gas counter for measurements of  radiation deposited in cellular (10um diameter) sized volumes. Four main problems were addressed
  1. Inadequare requirement specifications and analysis of shape of sensitive volume
  2. Diffusion of charge within the silicon obscures the charge collection volume boundary.
  3. Tissue equivalence of silicon for microdosimetric measurements.
  4. Poor noise performance in comparison with gas counter.
Some of the experimental and theoretical work performed is summarised below.

Figure 1: SEM Photograph of the prototype microdosimeter. The width of the photo is 24um.
The raised surfaces are Aluminium tracks electrically connecting each diode cell.
The n+ diode junction is on the right whilst the p+ contact is on the left.


Figure 2: Electron density for 2um SOI device, 100ps after 5.3MeV alpha strike at x=3.5,y=15um. (1/4 of device is shown, dimensions 15x15x2um, center of diode is nearest to viewpoint). The alpha radiation generates electron-hole pairs in the silicon. The minority carrier electrons diffuse as shown by the radial diffusion profile above. The electrons are collected at the n+ junction (red). Charge collection is efficient in this region due to the strong electric field within the depletion region. A 2D animated transient simulation is also available.

Figure 3: Microbeam image (Ion Beam Induced Charge, 2MeV alpha)  of 10x10x2um SOI device. Red (300keV) corresponds to lowest charge collection amplitude at the boundaries of each diode cell and gray (750keV) is the highest amplitude corresponding to charge collection in the central junction (depletion region). In an ideal microdosimeter charge collection would only occur within a well defined central region however charge diffusion results in charge collection from all regions of the silicon. Lateral isolation barriers are planned which will prevent lateral charge diffusion. The experiment was performed at MicroAnalytical Research Center, Department of Physics, University of Melbourne.


Publications and conferences


Some useful software

If you are interested in the software below please send me an email.