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Si Radiation Hardness Studies
This project involves the study of radiation defects in ion-implanted silicon detectors under neutron, proton, electron and gamma radiation. Experimental techniques used in this research include: Deep Level Transient Spectroscopy (DLTS), Optical Deep Level Transient Spectroscopy (ODLTS), Capacitance-Voltage (C-V), Current-Voltage (I-V), TCT, IR spectroscopy, and microbeam imaging.
Collaborators: ANSTO, UoM, SPA Detector, KINR
Radiation Monitoring System for the BELLE experiment
During this project we proposed and developed a 32x2 channel computer controlled radiation monitoring system for SVD BELLE (KEK, Japan). The system is able to measure the integral dose of ionizing radiation in CMOS electronics and the damage KERMA in silicon strip detectors in terms of 1MeV(Si) neutron fluence.
Collaborators: REM OXFORD UK, Uni. of Sydney, Uni. of Melbourne, KEK, SPA BIT
Radiation Monitoring System for SLAC, Stanford University
Radiation Damage Measuring System which able to measure damage in silicon electronics in terms of ionizing energy losses (IEL) and non-ionizing energy losses (NIEL) has been developed and supplied to SLAC. The system is based on small semiconductors sensors, connected to 100m of cable, battery operated, with an RS-232 interface. The System is under mixed gamma neutron radiation test at SNL and successfully pasted test at Missile Martin Marietta Co.
Collaborators: REM OXFORD UK, SPA BIT
Radiation Monitoring System for Argonne National Lab (ANL)
A system is being developed for installation at the Advanced Photon Source to monitor damage of storage ring electronics by X-ray and photo-neutrons. More details later.
Collaborators: REM Oxford
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